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  • Silicon Carbide Liner - Shiwan,Ceramics Industry Research ...

    Silicon Carbide Liner Profile Product Profile: A Silicon carbide liner is using a silicon carbide piece insert into a supportive metal ... copyright all (C)2007 Shiwan,Ceramics Industry Research Institute Co.,Ltd /GUTE Ceramic mold mechanical equipment

  • Silicon as a semiconductor: silicon carbide would be

    2020-7-16  In power electronics, semiconductors are based on the element silicon – but the energy efficiency of silicon carbide would be much higher.

  • The 280th: Silicon Carbide Power Electronics:

    Title: Silicon Carbide Power Electronics: Challenges and Opportunities Speaker: Prof. James A. Cooper(Purdue University, USA) Time: May. 26, 2016 10:00AM . Venue: Academic Conference Center, IOS, CAS Abstract: It was recognized as early as 1989 that electronic power devices in silicon were approaching their theoretical limits, and progress could only be made by moving to a

  • Silicon carbide SiC - PubChem

    Silicon carbide appears as yellow to green to bluish-black, iridescent crystals. Sublimes with decomposition at 2700°C. Density 3.21 g cm-3. Insoluble in water.Soluble in

  • Silicon Carbide - Fraunhofer Institute for Integrated ...

    Group Manager Silicon Carbide Fraunhofer Institute for Integrated Systems and Device Technology IISB Schottkystrasse 10 91058 Erlangen, Germany Phone +49 9131 761 - 135

  • silicon carbide - NIST

    The National Institute of Standards and Technology (NIST) uses its best efforts to deliver a high quality copy of the Database and to verify that the data contained therein have been selected on the basis of sound scientific judgment.

  • Materials Special Issue : Silicon Carbide: From ...

    Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia ... Silicon carbide is a radiation-resistant material. The high thermal conductivity of SiC (at the level of thermal conductivity of copper) greatly simplifies the problem of heat removal from devices. This property, combined with high ...

  • NSM Archive - Silicon Carbide (SiC) - Ioffe Institute

    2003-11-15  Announcement. Dear colleagues, If you have new information of SiC physical properties [links, papers (.pdf, .doc, .tif...)] and would like to present it on this website Electronic archive: "New Semiconductor Materials.Characteristics and Properties" please contact us. Thank you in

  • Ultra High Temperature Silicon Carbide Fiber NASA ...

    Ultra High Temperature Silicon Carbide Fiber . Discipline Area: Materials. Principal Investigator: James A DiCarlo. Read more about James A DiCarlo; Organization: NASA Glenn Research Center. Program: Seedling. Round: 1. Phase: Phase I. Period of Performance: Jul 1 2011 to Jun 30 2012. Co-Investigators:

  • An Overview of Silicon Carbide Device Technology

    2013-8-30  AN OVERVIEW OF SILICON CARBIDE DEVICE TECHNOLOGY Philip G. Neudeck Ohio Aerospace Institute 2001 Aerospace Parkway Brook Park, OH 44142 Lawrence G. Matus NASA Lewis Research Center 21000 Brookpark Road Cleveland, OH 44135 Abstract Recent progress in the development of silicon carbide (SIC) as a semiconductor is briefly reviewed.

  • silicon carbide - NIST

    The National Institute of Standards and Technology (NIST) uses its best efforts to deliver a high quality copy of the Database and to verify that the data contained therein have been selected on the basis of sound scientific judgment.

  • STUDY ON SILICON CARBIDE PRODUCED FROM RICE

    2017-10-17  1.2 SILICON CARBIDE Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Grains of silicon carbide can be bonded together by

  • CDC - NIOSH Pocket Guide to Chemical Hazards -

    A meta description is an HTML tag in the HTML code of your website, which allows you to customize a section of text that describes the page itself. It plays a role in how your page is seen by search engine crawlers, and how it appears in SERPs

  • Reaction Bonded Silicon Carbide – Mc Nally Institute

    Reaction bonded silicon carbide is produced by adding molten silicon to a mixture of silicon carbide and carbon. A reaction between the silicon and carbon bonds the structure while the excess silicon metal fills the majority of the pits left in the resultant material. There is almost no shrinkage during the process.

  • An Overview of Silicon Carbide Device Technology

    2013-8-30  AN OVERVIEW OF SILICON CARBIDE DEVICE TECHNOLOGY Philip G. Neudeck Ohio Aerospace Institute 2001 Aerospace Parkway Brook Park, OH 44142 Lawrence G. Matus NASA Lewis Research Center 21000 Brookpark Road Cleveland, OH 44135 Abstract Recent progress in the development of silicon carbide (SIC) as a semiconductor is briefly reviewed.

  • SILICON CARBIDE, powder Safety Data Sheet SIS6959

    2018-8-8  SIS6959.0 - SILICON CARBIDE, powder SILICON CARBIDE, powder Safety Data Sheet SIS6959.0 Date of issue: 01/23/2017 Version: 1.0 Print date: 01/23/2017 EN (English US) SDS ID: SIS6959.0 Page 1 SECTION 1: Identification

  • Technical Publications Silicon Carbide Electronics and ...

    2019-5-2  Deep RIE Process for Silicon Carbide Power Electronics and MEMS: Conference Paper: Materials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society: 2000: Device Processing, Etching, MEMS: Beheim, Salupo: 600 C Logic Gates Using Silicon Carbide JFET's: Conference Paper

  • Metal assisted photochemical etching of 4H silicon carbide

    silicon carbide Markus Leitgeb 1, Christopher Zellner , Michael Schneider1, Stefan Schwab2, Herbert Hutter2 and Ulrich Schmid1 1 Institute of Sensor and Actuator Systems, TU Wien, Gusshausstraße 27-29, Vienna 1040, Austria 2 Institute of Chemical Technology and Analytics, TU Wien, Getreidemarkt 9/164, Vienna 1040, Austria

  • Liquid_silicon_infiltration_description_of_infiltration ...

    2010-4-26  Therefore, after initial silicon liquid silicon infiltration: F. H. Gern and R. Kochendkfer reaction zone Figure 3 Formation diffusion of Si atoms at the capillary wi 111s of silicon carbide Figure 4 Infiltration dynamics of the single capillary system Table 1 Some physical

  • PowerAmerica – Advancing Wide Bandgap Power

    PowerAmerica, a proud member of Manufacturing USA, brings together the brightest minds in the wide bandgap (WBG) semiconductor world.Semiconductor manufacturers and the companies that use power semiconductors in their products are working together to accelerate the adoption of next generation silicon carbide (SiC) and gallium nitride (GaN) power electronics.

  • Reaction Bonded Silicon Carbide – Mc Nally Institute

    Reaction bonded silicon carbide is produced by adding molten silicon to a mixture of silicon carbide and carbon. A reaction between the silicon and carbon bonds the structure while the excess silicon metal fills the majority of the pits left in the resultant material. There is almost no shrinkage during the process.

  • CDC - NIOSH Pocket Guide to Chemical Hazards -

    A meta description is an HTML tag in the HTML code of your website, which allows you to customize a section of text that describes the page itself. It plays a role in how your page is seen by search engine crawlers, and how it appears in SERPs

  • Silicon carbide SiC - PubChem

    Silicon carbide appears as yellow to green to bluish-black, iridescent crystals. Sublimes with decomposition at 2700°C. Density 3.21 g cm-3. Insoluble in water.Soluble in

  • 1988 OSHA PEL Project - Silicon Carbide NIOSH CDC

    Guinea pigs exposed to silicon carbide dust and infected with the tubercle bacteria developed tuberculopneumoconiotic lesions (Gross, Westrick, and McNerney 1959/Ex. 1-697). Miller and Sayers (1941/Ex. 1-595) observed that silicon carbide dust administered by intraperitoneal injection to guinea pigs produced no reaction.

  • Silicon carbide - Wikipedia

    2020-7-14  Silicon carbide (SiC), also known as carborundum / k ɑːr b ə ˈ r ʌ n d əm /, is a semiconductor containing silicon and carbon.It occurs in nature as the extremely rare mineral moissanite.Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive.Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in

  • THE ETCHING OF SILICON CARBIDE - ScienceDirect

    Mat. Res. Bull. Vol. 4, pp. S 199 - S 210, 1969. Printed in the United States. Pergamon P r e s s , Inc. THE ETCHING OF SILICON CARBIDE V. J. Jennings Lanchester College of Technology Coventry, Warwickshire England (Received October 22, 1968) ABSTRACT Developments in methods for etching silicon carbide are reviewed.

  • STUDY ON SILICON CARBIDE PRODUCED FROM RICE

    2017-10-17  1.2 SILICON CARBIDE Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Grains of silicon carbide can be bonded together by

  • Study of formation of silicon carbide in the Acheson ...

    Formation of silicon carbide in the Acheson process was studied using a mass transfer model which has been developed in this study. The century old Acheson process is still used for the mass production of silicon carbide. A heat resistance furnace is used in the Acheson process which uses sand and petroleum coke as major raw materials.

  • Metal assisted photochemical etching of 4H silicon carbide

    silicon carbide Markus Leitgeb 1, Christopher Zellner , Michael Schneider1, Stefan Schwab2, Herbert Hutter2 and Ulrich Schmid1 1 Institute of Sensor and Actuator Systems, TU Wien, Gusshausstraße 27-29, Vienna 1040, Austria 2 Institute of Chemical Technology and Analytics, TU Wien, Getreidemarkt 9/164, Vienna 1040, Austria

  • Corrosion characteristics of silicon carbide and silicon ...

    2011-1-3  National Institute of Standards and Technology, Gaithersburg, MD 20899-0001 The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the proper- ties, performance, and durability of var- ious forms of silicon carbide and silicon nitride.

  • Metal assisted photochemical etching of 4H silicon carbide

    silicon carbide Markus Leitgeb 1, Christopher Zellner , Michael Schneider1, Stefan Schwab2, Herbert Hutter2 and Ulrich Schmid1 1 Institute of Sensor and Actuator Systems, TU Wien, Gusshausstraße 27-29, Vienna 1040, Austria 2 Institute of Chemical Technology and Analytics, TU Wien, Getreidemarkt 9/164, Vienna 1040, Austria

  • Fatigue Behaviour of Silicon Carbide and Fly Ash ...

    The SN ratio is considered to be optimum for “Larger is the best condition” and henceforth the ranking based on the delta value is the highest for silicon carbide and least for the melt temperature. i.e., the effect of the weight percentage of silicon carbide as a factor on the fatigue strength is ranked first, followed by weight percentage ...

  • 中国的碳化矽 (矽碳化物) 产业分析:2019~2025年 -GII

    Silicon carbide (SiC) is the most mature and the most widely used among third-generation wide band gap semiconductor materials. Over the past two years, global SiC market capacity, however, hovered around 3 million tons due to producers' unwillingness to expand production, a result of high technical barriers (unstable quality of the raw material crystal column).

  • Stereolithographic Additive Manufacturing of Silicon ...

    Silicon carbide(SiC)ceramics have been used for a variety of applications in the aerospace industry. However, using a conventional SiC molding technology, manufacturing of a complicated shape with high accuracy is significantly difficult. Stereolithography can easily produce complex shapes. The stereolithography based additive manufacturing ...

  • Nano-sized silicon carbide: synthesis, structure and ...

    polytype and three hexagonal versions, silicon carbide is R A Andrievski Institute of Problems of Chemical Physics, Russian Academy of Sciences, prosp. Akad. Semenova 1, 142432 Chernogolovka, Moscow Region, Russian Federation. Fax (7-496) 522 35 07, tel. (7-496) 522 77 93, e-mail: [email protected] Received 8 April 2009

  • Strong, Fracture-Resistant Biomimetic Silicon Carbide ...

    2019-12-24  Strong, Fracture-Resistant Biomimetic Silicon Carbide Composites with Laminated Interwoven Nanoarchitectures Inspired by the Crustacean Exoskeleton Mingyang Zhang Materials Fatigue and Fracture Division, Institute of Metal Research, Chinese

  • Effect of silicon carbide on the mechanical and

    In this article, the preparation of silicon carbide (SiC), carbon fiber (CF), and ethylene–propylene–diene monomer composite with different parts per hundred of SiC (phr) ratio (CF/SiC; 10/0, 0/10, 10/10, 10/15, 10/20) and its effect on mechanical and thermal properties have been studied.

  • Large area and structured epitaxial graphene produced by ...

    Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide Walt A. de Heera,1, Claire Bergera,b, Ming Ruana, Mike Sprinklea, Xuebin Lia, Yike Hua, Baiqian Zhanga, John Hankinsona, and Edward Conrada aSchool of Physics, Georgia Institute of Technology, Atlanta, GA 30332-0430; and bCentre National de la Recherche Scientifique-Institut Néel ...

  • Chemical Properties of Oxidized Silicon Carbide

    2019-12-12  Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process that is now well understood and accepted. This surface has become a standard for studies of surface science and an important component in silicon device processing for microelectronics, energy, and sensor applications. The present work shows that HF etching of oxidized silicon carbide (SiC) leads to

  • Corrosion characteristics of silicon carbide and silicon ...

    2011-1-3  National Institute of Standards and Technology, Gaithersburg, MD 20899-0001 The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the proper- ties, performance, and durability of var- ious forms of silicon carbide and silicon nitride.